DMP213DUFA document number: ds36466 rev. 1 - 2 1 of 6 www.diodes.com july 2014 ? diodes incorporated DMP213DUFA 25v p-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) i d t a = +25 c -25v 10 ? @ v gs = -4.5v -166ma 13 ? @ v gs = -2.7v -138ma description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? load switch ? portable applications ? power management functions features ? 0.4mm ultra low profile package for thin application ? 0.48mm 2 package footprint, 16 times smaller than sot23 ? low v gs(th), can be driven directly from a battery ? low r ds(on) ? esd protected gate (>6kv human body mode) ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: x2-dfn0806-3 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 e4 ? weight: 0.00043 grams (approximate) ordering information (note 4) part number case packaging DMP213DUFA-7b x2-dfn0806-3 10,000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information equivalent circuit bottom view top view package pin configuration 36 = product type marking code dmn213dufa-7b top view bar denotes gate and source side x2-dfn0806-3 body diode gate protection diode gate source drain 36 esd hbm >6kv
DMP213DUFA document number: ds36466 rev. 1 - 2 2 of 6 www.diodes.com july 2014 ? diodes incorporated DMP213DUFA maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss -25 v gate-source voltage v gss -8 continuous drain current v gs = 4.5v (note 6) i d -166 ma t a = +70c (note 6) -125 (note 5) i d -145 ma pulsed drain current (note 7) i dm -500 ma thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 360 mw thermal resistance, junction to ambient (note 5) r ja 353 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -25 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current i dss ? ? -1 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? -100 na v gs = -8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs(th) -0.65 -0.9 -1.5 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds(on) ? ? 10 ? v gs = -4.5v, i d = -0.2a ? ? 13 v gs = -2.7v, i d = -0.05a forward transfer admittance |y fs | ? 189 ? s v ds = -5v, i d = -0.2a diode forward voltage v sd ? ? -1.5 v v gs = 0v, i s = -0.2a dynamic characteristics (note 8) input capacitance c iss ? 27.2 ? pf v ds = -10v, v gs = 0v, f = 1mhz output capacitance c oss ? 6.1 ? pf reverse transfer capacitance c rss ? 1.7 ? pf total gate charge q g ? 0.35 ? nc v ds = -5v, i d = -0.2a, v gs = -4.5v gate-source charge q gs ? 0.08 ? nc gate-drain charge q gd ? 0.06 ? nc turn-on delay time t d(on) ? 4.5 ? ns v ds = -6v, v gs = -4.5v, i d = -0.2a, r g = 50 ? turn-on rise time t r ? 2.3 ? ns turn-off delay time t d(off) ? 24.1 ? ns turn-off fall time t f ? 11 ? ns notes: 5. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr-4 substrate pc board, 2o z copper, with 1inch square copper pad layout 7 .short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
DMP213DUFA document number: ds36466 rev. 1 - 2 3 of 6 www.diodes.com july 2014 ? diodes incorporated DMP213DUFA v , drain -source voltage (v) figure 1 typical output characteristics ds i, d r ai n c u r r e n t (a) d 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 012345 v = -1.2v gs v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -2.7v gs v = -4.0v gs v = -4.5v gs v = -8.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ain c u r r en t (a) d 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t = 150c a t = 125 c a t = 85c a t = 25c a t = -55c a v= -5.0v ds i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 0 0.2 0.4 0.6 0.8 1 v = -2.7v gs v = -4.5v gs i , drain source current (a) figure 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs t , junction temperature ( c) j figure 5 on-resistance variation with temperature r , d r ai n -s o u r c e on-resistance (normalized) ds(on) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = -4.5v i = -300ma gs d t , junction temperature ( c) j figure 6 on-resistance variation with temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 -25 0 25 50 75 100 125 150 v=5v i= a gs d -4. -300m
DMP213DUFA document number: ds36466 rev. 1 - 2 4 of 6 www.diodes.com july 2014 ? diodes incorporated DMP213DUFA t , ambient temperature (c) figure 7 gate threshold variation vs. ambient temperature a v, g a t e t h r es h o ld v o l t a g e (v) gs(th) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 -50 -25 0 25 50 75 100 125 150 -i = 1ma d -i = 250a d v , source-drain voltage (v) figure 8 diode forward voltage vs. current sd i, s o u r c e c u r r en t (a) s t= 125c a 0 0.2 0.4 0.6 0.8 1 0 0.3 0.6 0.9 1.2 1.5 t= 85c a t= 150c a t= -55c a t= 25c a c , j u n c t i o n c a p a c i t an c e (p f ) t v , drain-source voltage (v) figure 9 typical junction capacitance ds 1 10 100 0 5 10 15 20 25 f = 1mhz c oss c rss c iss q , total gate charge (nc) figure 10 gate-charge characteristics g v, g a t e-s o u r c e v o l t a g e (v) gs 0 2 4 6 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v= -5v i = -200ma ds d v , drain-source voltage (v) figure 11 soa, safe operation area ds i, d r ain c u r r en t (a) d t = 150c t = 25c j(max) a v = -4.5v single pulse gs dut on 1 * mrp board 0.01 0.1 1 0.1 1 10 r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w 100
DMP213DUFA document number: ds36466 rev. 1 - 2 5 of 6 www.diodes.com july 2014 ? diodes incorporated DMP213DUFA t1, pulse duration times (sec) figure 12 transient thermal resistance r(t), t r ansien t t h e r mal r esis t an c e d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 339c/w duty cycle, d = t1/ t2 ? ja ja ja 0.001 0.01 0.1 1 d = 0.9 package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. x2-dfn0806-3 dim min max typ a 0.375 0.40 0.39 a1 0 0.05 0.02 a3 - - 0.10 b 0.10 0.20 0.15 d 0.55 0.65 0.60 d1 0.35 0.45 0.40 e 0.75 0.85 0.80 e1 0.20 0.30 0.25 e - - 0.35 k - - 0.20 l 0.20 0.30 0.25 all dimensions in mm dimensions value (in mm) c 0.350 x 0.200 x1 0.450 x2 0.550 y 0.375 y1 0.475 y2 1.000 a a3 seating plane a1 d e b (2x) l (2x) e d1 e1 pin#1 r0.075 k x1 x2 y2 y1 y (2x) x (2x) c
DMP213DUFA document number: ds36466 rev. 1 - 2 6 of 6 www.diodes.com july 2014 ? diodes incorporated DMP213DUFA important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling can be reasonably expected to re sult in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
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